NTU Achieves 2D Semiconductor Breakthrough

An international research collaboration spearheaded by Professor Yi-Chia Chou at National Taiwan University (NTU), in conjunction with the University of Tokyo and Academia Sinica, has achieved a monumental breakthrough in 2D materials. Published in the prestigious journal Nature, their study demonstrates the successful synthesis of wafer-scale monolayer p-type boron carbon nitride (BCN) semiconductors.

While high-performance n-type 2D semiconductors have seen significant progress, developing comparable p-type materials has remained a major challenge for the integration of next-generation micro-transistors. The research team overcame this hurdle by precisely doping carbon atoms into a single-layer boron nitride lattice at the atomic level. This innovative atomic substitution alters the electronic state, granting the BCN semiconductor exceptionally high hole mobility characteristics. By carefully controlling the reaction pathways, the researchers successfully scaled this atomic structure to a 2-inch wafer size. This pioneering achievement effectively bridges the gap between atomic-level material design and wafer-scale semiconductor manufacturing, holding tremendous potential for the future of compact, three-dimensional integrated electronic circuits.