Development of Advanced Technology by IU

A research team led by Professors Moon-Sang Lee and Myung-Kwan Ham (Department of Materials Science and Engineering, Inha University) has recently developed a flexible, ultra-low-power next-generation artificial synaptic device based on the two-dimensional nanomaterial tellurene, demonstrating potential for direct end-user applications.

Neuromorphic semiconductors, which mimic the structure of the human brain, are considered a next-generation semiconductor technology. They enable parallel computing while significantly reducing power consumption, making them highly attractive for future computing industries.

The team synthesized tellurene (a 2D form of tellurium), one of the promising 2D nanomaterials, and fabricated an artificial synaptic device to improve neuromorphic semiconductor efficiency. Their analysis confirmed the feasibility of applying the device to next-generation neuromorphic edge computing, highlighting its ultra-low power consumption, reconfigurability, and flexibility.

Tellurene possesses high charge mobility and strong mechanical stability. The team synthesized 2D tellurene using a hydrothermal method and implemented it into an artificial synapse with a transistor-like structure.

The resulting device demonstrated an ultra-low-power consumption of about 10 femtojoules (fJ). Experimental results showed that 2D tellurene-based synaptic devices could be applied to end-user products, broadening the scope for applications in electronic skin, wearable devices, and other edge computing systems.

Professor Moon-Sang Lee stated: “This study is significant in that it implemented flexible artificial synaptic devices based on 2D nanomaterials with enhanced synaptic characteristics, thereby demonstrating their potential for neuromorphic edge computing applications.” Professor Myung-Kwan Ham added: “The developed synaptic device overcomes the limitations of conventional nanomaterials and is expected to be applicable across diverse environments.” This research was recently published online in the Royal Society of Chemistry’s international journal Journal of Materials Chemistry C.

The first authors are M.S. candidates Bo-Rim Yoo and Ji-Chan Yoon (Department of Materials Science and Engineering). Students Yu-Na Kim, Ji-Hyang Park, and Jin-A Park also contributed to the study. Professors Moon-Sang Lee and Myung-Kwan Ham (Inha University), along with Prof. Eon-Jeong Kim (Dongguk University), served as co-corresponding authors.